Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, and Susanne Stemmer Materials Department, University of California, Santa Barbara, California, 93106-5050, USA Department of Physics, University of California, Santa Barbara, California, 93106-9530, USA FEI, Achtseweg Noord 5, 5651 GG Ein...

متن کامل

Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface

1 Hysteresis eects All the I SD-V G plots of our devices were accompanied by hysteresis. Fig. S1 (a) shows the channel current of Sample C as a function of gate voltage V G for V SD = 5 V. An increase in V G to 40 V is accompanied by monotonic increase in I SD from ∼1 nA to ∼100 µA. However, with decreasing V G from 40 V to zero (sequence 6-7-8), the current exhibited a hysteresis. The remnant ...

متن کامل

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions

Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced red...

متن کامل

Ultraviolet Lasers Realized via Electrostatic Doping Method

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconducto...

متن کامل

Nanoscale electrostatic control of oxide interfaces.

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO3/SrTiO3 as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultralow leakage currents, and long-term stability of these gates allow us to perform a variety of ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2011

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.3669402